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 Schnelle IR-Lumineszenzdiode (950 nm) im SMR(R)-Gehause High-Speed Infrared Emitter (950 nm) in SMR(R) Package SFH 4500 SFH 4505
SFH 4500
SFH 4505
Wesentliche Merkmale * Hohe Pulsleistung und hoher Gesamtstrahlungsflu e * SMR(R) (Surface Mount Radial)-Gehause * Sehr kurze Schaltzeiten (10 ns) * Sehr hohe Langzeitstabilitat * Hohe Zuverlassigkeit Anwendungen * Bauteil mit hoher Strahlstarke zur Oberflachenmontage (SMT) * Schnelle Datenubertragung mit Ubertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) * Analoge und digitale Hi-Fi Audio- und Videosignalubertragung * Batteriebetriebene Gerate (geringe Stromaufnahme) * Anwendungen mit hohen Zuverlassigkeits-anspruchen bzw. erhohten Anforderungen * Alarm- und Sicherungssysteme * IR Freiraumubertragung
Features * * * * * High pulse power and high radiant flux e SMR(R) (Surface Mount Radial) package Very short switching times (10 ns) Very high long-time stability High reliability
Applications * Device with high radiant intensity suitable for surface mounting (SMT) * High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) * Analog and digital Hi-Fi audio and video signal transmission * Low power consumption (battery) equipment * Suitable for professional and high-reliability applications * Alarm and safety equipment * IR free air transmission
2000-01-01
1
OPTO SEMICONDUCTORS
SFH 4500, SFH 4505
Typ Type SFH 4500 SFH 4505
Bestellnummer Ordering Code Q62702-P5163 Q62702-P5164
Gehause Package 5-mm-SMR(R)-Gehause (T1 3/4), schwarzes EpoxyGieharz, Anschlusse (SFH 4500 gebogen, SFH 4505 gerade) im 2.54-mm-Raster (1/10''), Kathodenkennung: siehe Mazeichnung. 5 mm SMR(R) package (T1 3/4), black epoxy resin, solder tabs (SFH 4500 bent, SFH 4505 straight) lead spacing 2.54 mm (1/10''), cathode marking: see package outline.
Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom Surge current tp = 10 s, D = 0 Verlustleistung Power dissipation Warmewiderstand Sperrschicht - Umgebung, freie Beinchenlange max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm Symbol Symbol Wert Value - 40 ... + 85 3 100 1 Einheit Unit C V mA A
Top; Tstg VR
IF (DC)
IFSM
Ptot RthJA
180 375
mW K/W
2000-01-01
2
OPTO SEMICONDUCTORS
SFH 4500, SFH 4505
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength of peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from 10% to 90% and from 90% to10% IF = 100 mA, tP = 20 ms, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 3 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e Temperature coefficient of Ie or e IF = 100 mA Symbol Symbol peak Wert Value 950 Einheit Unit nm
40
nm
10 0.09 0.3 x 0.3 10
Grad deg. mm2 mm ns
A LxB LxW
tr, tf
Co
35
pF
VF VF
1.5 ( 1.8) 3.2 ( 3.6) 0.01 ( 10)
V V A
IR
e
32
mW
TCI
- 0.44
%/K
2000-01-01
3
OPTO SEMICONDUCTORS
SFH 4500, SFH 4505
Kennwerte (TA = 25 C) (cont'd) Characteristics Bezeichnung Parameter Temperaturkoeffizient von VF Temperature coefficient of VF IF = 100 mA Temperaturkoeffizient von Temperature coefficient of IF = 100 mA Symbol Symbol TCV Wert Value - 1.5 Einheit Unit mV/K
TC
+ 0.2
nm/K
Strahlstarke e in Achsrichtung gemessen bei einem Raumwinkel von = 0.01 sr Radiant Intensity e in Axial Direction measured at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Symbol Ie min Ie typ Ie typ Wert Value 40 80 500 Einheit Unit mW/sr mW/sr mW/sr
Lotbedingungen Soldering Conditions Tauch-, Schwall- und Schlepplotung Dip, wave and drag soldering Lotpadtemperatur Maximal zulassige Lotzeit Abstand Lotstelle - Gehause Kolbenlotung (mit 1,5-mm-Kolbenspitze) Iron soldering (with 1.5-mm-bit) Temperatur des Kolbens Maximale zulassige Lotzeit Max. permissible soldering time 3s Abstand Lotstelle - Gehause Distance between solder joint and case
Temperature of the soldering bath 260 C
Max. perm. Distance soldering time between solder joint and case 10 s
Temperature of the soldering iron 300 C
1.5 mm
1.5 mm
2000-01-01
4
OPTO SEMICONDUCTORS
SFH 4500, SFH 4505
Relative Spectral Emission Ierel = f ()
100
OHF00777
Radiant Intensity e/e (100 mA) = f (IF) Single pulse, tp = 20 s
10 2 e e (100 mA)
OHF00809
Max. Permissible Forward Current IF = f (TA)
F
120 mA 100
OHF00387
erel
80
80
60
10 0
60
40
10 -1
40
20
10 -2
20
0
800 850
900
950 1000
nm 1100
10 -3 10 0
10 1
10 2
10 3 mA 10 4 F
0
0
20
40
60
80
100 C 120 TA
Forward Current IF = f (VF) single pulse, tp = 20 s
F
10 4 mA 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3
OHF00784
Radiation Characteristic
Ierel = f ()
40 30 20 10 0
OHF01019
1.0
50
0.8
0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0
0 0.5 1 1.5 2 2.5 3 3.5
V 4.5
VF
2000-01-01
5
OPTO SEMICONDUCTORS
SFH 4500, SFH 4505
Mazeichnungen Package Outlines
SFH 4500
Chip position 4.5 7.5 3.9 5.5 2.7 2.3 2.05 R 1.95
2.7 2.4
(3.2) (R 2.8) (3.2) 6.0 5.4
14.7 13.1
Cathode
2.54 mm spacing
4.5 3.9 7.7 7.1
-0.1...0.1
3.7 3.3
4.8 4.4
GEO06960
SFH 4505
7.4
2.05 R 1.95
4.8 4.4
2.7 2.4
Chip position 4.5 3.9 8.0
(3.2) (R 2.8) (3.2) 6.0 5.4
15.5 14.7 Cathode
2.54 mm spacing
4.5 3.9 7.7 7.1
-0.15...0..15
GEO06961
Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.
2000-01-01
6
OPTO SEMICONDUCTORS


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